SiC Power Module
E3/SiC
- Circuit diagram: see the left side for details
- Scope of application/li>
- Characteristic：Terminal ultrasonic welding, copper wire bonding process, high strength ceramic substrate.
- INQUIRY
| Product | Product Status | Vces(V) | Vges(V) | Ic(A) | Configuration | Vce(sat) (V) | Vf((V) | Eon (mj) | Eoff(mj) |
| DMH300B12NE3P1 | Developing | 1200 | +25/-10 | 300 | Half Bridge | 1.30 | 1.60 | T.B.D | T.B.D |
| DMH400B12NE3P1 | Developing | 1200 | +25/-10 | 400 | Half Bridge | 1.30 | 1.60 | T.B.D | T.B.D |
| DMH600B12NE3P1 | Developing | 1200 | +25/-10 | 600 | Half Bridge | 1.30 | 1.60 | T.B.D | T.B.D |
| DMH300B12NE3P1 | Developing | 1200 | +20/-4 | 300 | Half Bridge | 1.80 | 2.00 | T.B.D | T.B.D |
| DMH400B12NE3P1 | Developing | 1200 | +20/-4 | 400 | Half Bridge | 1.80 | 2.00 | T.B.D | T.B.D |
| DMH600B12NE3P1 | Developing | 1200 | +20/-4 | 600 | Half Bridge | 1.80 | 2.00 | T.B.D | T.B.D |
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Add： No. 77, Louyang Road, Suzhou Industrial Park
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